Technical Program

Thursday, May 31, 2018

Session 23: RF and THz Module Components
1:30 PM - 5:10 PM
Committee: High-Speed, Wireless & Components
Room: Nautilus 3

Session Co-Chairs:

Craig Gaw
NXP Semiconductor
T +1-480-814-5142
c.a.gaw@ieee.org
Amit P. Agrawal
Microsemi Corporation
T +1-408-666-8452
amit.agrawal@microsemi.com

Papers:

1. 1:30 PM - Package Co-Design of a Fully Integrated Multimode 76-81GHz 45nm RFCMOS FMCW Automotive Radar Transceiver
Jie Chen - Texas Instruments, Inc.
Ming Li - Texas Instruments, Inc.
Rajen Murugan - Texas Instruments, Inc.

2. 1:55 PM - Embedded Active Elements in 3D printed Structures for the Design of RF Circuits
Mohd Ifwat Mohd Ghazali - Michigan State University
Saikat Mondal - Michigan State University
Saranraj Karuppuswami - Michigan State University
Premjeet Chahal - Michigan State University

3. 2:20 PM - Miniaturized High-Performance Filters for 5G Small-Cell Applications
Muhammad Ali - Georgia Institute of Technology
Atom Watanabe - Georgia Institute of Technology
Markondeya Raj Pulugurtha - Georgia Institute of Technology
Sundaram Venkatesh - Georgia Institute of Technology
Manos M. Tentzeris - Georgia Institute of Technology
Rao. R Tummala - Georgia Institute of Technology

4. 3:30 PM - 3D-IPD with High Aspect Ratio Cu Pillar Inductor
Cheng-Yuan Kung - Advanced Semiconductor Engineering Group
Chien-Hua Chen - Advanced Semiconductor Engineering Group
Teck Chong Lee - Advanced Semiconductor Engineering Group
Hung-Yi Lin - Advanced Semiconductor Engineering Group
Shiuan-Yu Lin - Advanced Semiconductor Engineering Group
Yu-Chang Hsieh - Advanced Semiconductor Engineering Group
Pao-Nan Lee - Advanced Semiconductor Engineering Group
Chen-Chao Wang - Advanced Semiconductor Engineering Group

5. 3:55 PM - Ultra-Compact, High-Performance, 3D-IPD Integrated using Conformal 3D Interconnects
Ayad Ghannam - 3DiS Technologies S.A.S
Alessandro Magnani - 3DiS Technologies S.A.S
David Bourrier - 3DiS Technologies S.A.S
Thierry Parra - 3DiS Technologies S.A.S

6. 4:20 PM - 50 microns glass as the next-generation RF system-integration substrate: High Q inductances for 2.35 GHz impedance matching in 0.05 mm thin, glass substrates
Martin Letz - SCHOTT AG
Zihan Wu - Georgia Tech, PRC
Sukhadha Viswanathan - Georgia Tech, PRC
Matthias Jotz - SCHOTT AG
Holger Maune - Technical University of Darmstadt, IMP
Matthias Jost - Technical University of Darmstadt, IMP
Venkatesh Sundaram - Georgia Tech, PRC

7. 4:45 PM - Through Glass Via (TGV) Based Highly Compact and Low Insertion Loss Band Pass Filter for 5G Applications
Renuka Bowrothu - University of Florida
Jay Zhang - Corning Inc
Yong-Kyu Yoon - University of Florida