Technical Program

Session 10: Surface preparation for Cu bonding
Committee: Interconnections

Session Co-Chairs:

Jian Cai
Tsinghua University
T +86-13501114301
jamescai@tsinghua.edu.cn
Dingyou Zhang
Broadcom Inc.
T
dingyouzhang.brcm@gmail.com

Papers:

1. Plasma Activated Low-temperature Die-level Direct Bonding with Advanced Wafer Dicing Technologies for 3D Heterogeneous Integration
Katsuyuki Sakuma - IBM Corporation
Dishit Parekh - IBM Corporation
Michael Belyansky - IBM Corporation
Juan-Manuel Gomez - IBM Corporation
Dale McHerron - IBM Corporation
Ming Li - ASMPT
Yiu Ming Cheung - ASMPT
Siu Cheung So - ASMPT
Chun Ho Fan - ASMPT
Siu Wing Lau - ASMPT

2. Multi-Stack Wafer Bonding Demonstration utilizing Cu to Cu Hybrid Bonding and TSV Last enabling Diverse 3D Integration
TaeSeong Kim - Samsung Electronics Company, Ltd.
Sohye Cho - Samsung Electronics Company, Ltd.
JungSeob So - Samsung Electronics Company, Ltd.
SeonKwan Hwang - Samsung Electronics Company, Ltd.
Kyuha Lee - Samsung Electronics Company, Ltd.
YiKoan Hong - Samsung Electronics Company, Ltd.
HakSeung Lee - Samsung Electronics Company, Ltd.
KwangJin Moon - Samsung Electronics Company, Ltd.
HoonJoo Na - Samsung Electronics Company, Ltd.
KiHyun Hwang - Samsung Electronics Company, Ltd.

3. In-Depth Parametric Study of Ar or N2 Plasma Activated Cu Surfaces for Cu-Cu Direct Bonding
Liangxing Hu - Nanyang Technological University
Simon Chun Kiat Goh - Nanyang Technological University
Jing Tao - Nanyang Technological University
Yu Dian Lim - Nanyang Technological University
Peng Zhao - Nanyang Technological University
Michael Joo Zhong Lim - Nanyang Technological University
Chuan Seng Tan - Nanyang Technological University

4. Dielectric Materials Characterization for Hybrid Bonding
Vivek Chidambaram - Institute of Microelectronics, A*STAR
Prayudi Lianto - Asia Product Development Center (APDC), Applied Materials
Xiang Yu Wang - Institute of Microelectronics, A*STAR
Gilbert See - Asia Product Development Center (APDC), Applied Materials
Masaya Kawano - Institute of Microelectronics, A*STAR

5. Hybrid Bonding of Nanotwinned Copper/Organic Dielectrics with Low Thermal Budget
Kai-Cheng Shie - National Chiao Tung University
Pin-Syuan He - National Chiao Tung University
Yu-Hao Kuo - National Chiao Tung University
Jia Juen Ong - National Chiao Tung University
K.N. Tu - National Chiao Tung University
Benson Tzu-Hung Lin - MediaTek Inc
Chia-Cheng Chang - MediaTek Inc
Chih Chen - National Chiao Tung University

6. Comprehensive Study on Chip to Wafer Hybrid Bonding Process for Fine Pitch High Density Heterogeneous Applications
Sharon PeiSiang Lim - Institute of Microelectronics
Ser Choong Chong - Institute of Microelectronics
Vivek Chidambaram Nachiappan - Institute of Microelectronics

7. Cu-Cu Direct Hybrid Bonding Architecture using GaN on Si Wafers
Christophe Dubarry - CEA-LETI
Lucile Arnaud - CEA-LETI
Pierre Sixt - CEA-LETI
Armelle Lagrange - CEA-LETI
Gaëlle Mauguen - CEA-LETI
Romain Crochemore - CEA-LETI
Nicolas Bresson - CEA-LETI
Thierry Flahaut - CEA-LETI
Séverine Chéramy - CEA-LETI
Florence Servant - CEA-LETI