Technical Program

Session 21: Advances in Interconnect Reliability
Committee: Applied Reliability

Session Co-Chairs:

Donna M. Noctor
Nokia
T +1-484-666-7379
donna.noctor@nokia.com
Scott Savage
Medtronic Microelectronics Center
T +1-480-303-4749
scott.savage@medtronic.com

Papers:

1. Electromigration Mechanisms of Solder Joints with Limited Sn Volume in Advanced Electronic Packaging
Pilin Liu - Intel Corporation
Alan Overson - Intel Corporation
Deepak Goyal - Intel Corporation

2. Non-Destructive Observation of Void Formation due to Electromigration in Solder Microbump by 3D X-Ray
Kai-Cheng Shie - National Chiao Tung University
Tzu-Wen Lin - National Chiao Tung University
Po-Ning Hsu - National Chiao Tung University
K.N. Tu - National Chiao Tung University
Chih Chen - National Chiao Tung University

3. Study of Metallurgical Reaction and Electromigration Mechanism in Microbump with Embedded Cu Ball
Hossein Madanipour - University of Texas at Arlington
Yiram Kim - University of Texas at Arlington
Allison T Osmanson - University of Texas at Arlington
Mohsen Tajedini - University of Texas at Arlington
Choong-Un Kim - University of Texas at Arlington
Dibyajat Mishra - Texas Instruments
Patrick Thompson - Texas Instruments

4. Mechanical Behavior and Reliability of SAC+Bi Lead Free Solders with Various Levels of Bismuth
KM Rafidh Hassan - Auburn University
Jing Wu - Auburn University
Mohammad S. Alam - Auburn University
Jeffrey C. Suhling - Auburn University
Pradeep Lall - Auburn University

5. The Inflated Performance of Printed Electronics – The Evolution from Uniaxial to Biaxial Stretch Testing of Flexible Inks
Benjamin Stewart - Georgia Institute of Technology
Suresh Sitaraman - Georgia Institute of Technology

6. Resolving Thermo-Mechanically Induced Circumferential Crack Formation in Copper Through-Glass Via Substrate
Chukwudi Okoro - Corning Incorporated
Tammie Allowatt - Corning Incorporated
Scott Pollard - Corning Incorporated

7. The Comparative Study of High and Low Temperature Cured Polyimide For Wafer Level Package with Ultra-Thick Re-Distribution Copper Layer (Thickness 15 µm)
Kuei Hsiao Kuo - SPILSiliconware Precision Industries Co., Ltd
Ting-En Lin - Siliconware Precision Industries Co., Ltd
Joey Lin - Siliconware Precision Industries Co., Ltd
Yu Sheng Lin - Siliconware Precision Industries Co., Ltd
Stan Chen - Siliconware Precision Industries Co., Ltd
Feng Lung Chien - Siliconware Precision Industries Co., Ltd