Technical Program

Program Sessions: Wednesday May 31st 2:00 PM – 5:05 PM

Session 9: Innovations in Copper Chip-to-Wafer Bonding
Committee: Interconnections
Room: Mediterranean 2 & 3

Session Co-Chairs:

Wei-Chung Lo
Industrial Technology Research Institute
Email: [email protected]

Ou Li
Advanced Semiconductor Engineering, Inc.
Email: [email protected]

Papers:

1. Critical Challenges with Copper Hybrid Bonding for Chip-to-Wafer Memory Stacking
Wei Zhou – Micron Technology, Inc.
Michael Kwon – Micron Technology, Inc.
Yingta Chiu – Micron Technology, Inc.
Huimin Guo – Micron Technology, Inc.
Bharat Bhushan – Micron Technology, Inc.
Bret Street – Micron Technology, Inc.
Kunal Parekh – Micron Technology, Inc.
Akshay Singh – Micron Technology, Inc.

2. Development of Copper Thermal Coefficient for Low Temperature Hybrid Bonding
Sefa Dag – Applied Materials, Inc.
Ming Liu – Applied Materials, Inc.
Liu Jiang – Applied Materials, Inc.
Amir Kiaee – Applied Materials, Inc.
Gilbert See – Applied Materials, Inc.
Prayudi Lianto – Applied Materials, Inc.
Buvna Ayyagari-Sangamalli – Applied Materials, Inc.
El Mehdi Bazizi – Applied Materials, Inc.

3. Impact of Plasma Activation on Copper Surface Layer for Low Temperature Hybrid Bonding
Christopher Netzband – TEL Technology Center, America, LLC
Kandabara Tapily – TEL Technology Center, America, LLC
Dylan Burns – TEL Technology Center, America, LLC
Ilseok Son – TEL Technology Center, America, LLC
Cory Wajda – TEL Technology Center, America, LLC

4. Investigation of Cu-Cu Direct Bonding Process Utilized by High Porosity and Nanocrystal Structure
Takuma Nakagawa – Mitsubishi Materials Corporation
Daiki Furuyama – Mitsubishi Materials Corporation
Sho Nakagawa – Mitsubishi Materials Corporation
Yutaro Mori – Mitsubishi Materials Corporation
Kotaro Iwata – Mitsubishi Materials Corporation
Kiyotaka Nakaya – Mitsubishi Materials Corporation
Takuma Katase – Mitsubishi Materials Corporation

5. A High Throughput Two-Stage Die-to-Wafer Thermal Compression Bonding Scheme for Heterogeneous Integration
Krutikesh Sahoo – University of California, Los Angeles
Haoxiang Ren – University of California, Los Angeles
Subramanian S. Iyer – University of California, Los Angeles

6. Optimization of Cu Interconnects – SiCN Interfacial Adhesion by Surface Treatments
Dong Jun Kim – Korea Advanced Institute of Science and Technology
Sumin Kang – Korea Institute of Machinery and Materials
Sun Woo Lee – Samsung Electronics Co., Ltd.
Inhwa Lee – Samsung Electronics Co., Ltd.
Seungju Park – Samsung Electronics Co., Ltd.
Jihyun Lee – Samsung Electronics Co., Ltd.
Joong Jung Kim – Samsung Electronics Co., Ltd.
Taek-Soo Kim – Korea Advanced Institute of Science and Technology

7. Towards Selective Cobalt Atomic Layer Deposition for Chip-to-Wafer 3D Heterogeneous Integration
Madison Manley – Georgia Institute of Technology
Zachary Deveraux – Wayne State University
Victor Wang – University of California, San Diego
Chenghsuan Kuo – University of California, San Diego
Nyi Myat Khine Linn – Wayne State University
Andrew Kummel – University of California, San Diego
Charles Winter – Wayne State University
Muhannad Bakir – Georgia Institute of Technology