Technical Program

Program Sessions: Wednesday May 31st 2:00 PM — 5:05 PM

Session 9: Innovations in Copper Chip-to-Wafer Bonding
Committee: Interconnections
Room: Mediterranean 2 & 3

Session Co-Chairs:

Wei-Chung Lo
Industrial Technology Research Institute
Email: [email protected]

Ou Li
Advanced Semiconductor Engineering, Inc.
Email: [email protected]

Papers:

1. Solderless Interconnection Studies for Advanced Memory Chip-to-Wafer Stacking
Wei Zhou — Micron Technology, Inc.
Bharat Bhushan — Micron Technology, Inc.
Yingta Chiu — Micron Technology, Inc.
Ava Yang — Micron Technology, Inc.
Huimin Guo — Micron Technology, Inc.
Bret Street — Micron Technology, Inc.
Kunal Parekh — Micron Technology, Inc.
Akshay Singh — Micron Technology, Inc.

2. Development of Copper Thermal Coefficient for Low Temperature Hybrid Bonding
Sefa Dag — Applied Materials, Inc.
Liu Jiang — Applied Materials, Inc.
Amir Kiaee — Applied Materials, Inc.
Ying Wang — Applied Materials, Inc.
Prayudi Lianto — Applied Materials, Inc.
Jinho An — Applied Materials, Inc.
Ruiping Wang — Applied Materials, Inc.
Gilbert See — Applied Materials, Inc.
Arvind Sundarrajan — Applied Materials, Inc.
El Mehdi Bazizi — Applied Materials, Inc.
Buvna Ayyagari-Sangamalli — Applied Materials, Inc.

3. Impact of Plasma Activation on Copper Surface Layer for Low Temperature Hybrid Bonding
Christopher Netzband — TEL Technology Center, America, LLC
Kandabara Tapily — TEL Technology Center, America, LLC
Dylan Burns — TEL Technology Center, America, LLC
Ilseok Son — TEL Technology Center, America, LLC
Cory Wajda — TEL Technology Center, America, LLC

4. Investigation of Cu-Cu Direct Bonding Process Utilized by High Porosity and Nanocrystal Structure
Takuma Nakagawa — Mitsubishi Materials Corporation
Daiki Furuyama — Mitsubishi Materials Corporation
Sho Nakagawa — Mitsubishi Materials Corporation
Yutaro Mori — Mitsubishi Materials Corporation
Kotaro Iwata — Mitsubishi Materials Corporation
Kiyotaka Nakaya — Mitsubishi Materials Corporation
Takuma Katase — Mitsubishi Materials Corporation

5. A High Throughput Two-Stage Die-to-Wafer Thermal Compression Bonding Scheme for Heterogeneous Integration
Krutikesh Sahoo — University of California, Los Angeles
Haoxiang Ren — University of California, Los Angeles
Subramanian S. Iyer — University of California, Los Angeles

6. Optimization of Cu Interconnects - SiCN Interfacial Adhesion by Surface Treatments
Dong Jun Kim — Korea Advanced Institute of Science and Technology
Sumin Kang — Korea Institute of Machinery and Materials
Sun Woo Lee — Samsung Electronics Co., Ltd.
Inhwa Lee — Samsung Electronics Co., Ltd.
Seungju Park — Samsung Electronics Co., Ltd.
Jun Soo Lee — Samsung Electronics Co., Ltd.
Jihyun Lee — Samsung Electronics Co., Ltd.
Joong Jung Kim — Samsung Electronics Co., Ltd.
Taek-Soo Kim — Korea Advanced Institute of Science and Technology

7. Selective Cobalt Atomic Layer Deposition for Chip-to-Wafer 3D Heterogenous Integration
Madison Manley — Georgia Institute of Technology
Zachary Deveraux — Wayne State University
Ming-Jui Li — Georgia Institute of Technology
Nyi Myat Khine Linn — Wayne State University
Andrew Kummel — University of California, San Diego
Charles Winter — Wayne State University
Muhannad S. Bakir — Georgia Institute of Technology